MoSys Announces Start of 1T-SRAM Memory Validation by Lucent
SUNNYVALE, CA and ALLENTOWN, PA (December, 11, 2000) - MoSys, Inc.
announced today that Lucent's Microelectronics Group has started
validation of MoSys' 1T-SRAM memory technology by porting it to
the Lucent CMOS logic process.
"With the increasing trend toward system-level integration,
there is a continuous need to look at innovative ways of achieving
higher density memory solutions," commented Simeon Aymeloglu,
Manager of Embedded Memory Technology Development for Lucent's Microelectronics
Group. "MoSys' approach is one we are validating to achieve
improved densities over conventional SRAM."
"We are excited to work with Lucent's Microelectronics Group
as it validates the 1T-SRAM for increasing memory density in communications
ICs and other embedded memory applications," noted Mark-Eric
Jones, vice president and general manager of intellectual property
at MoSys, Inc.
Available in densities up to 128Mbits, MoSys' patented 1T-SRAM
technology uses a single transistor cell to achieve higher density
while maintaining the refresh-free interface and low latency random
memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM memory technology allow designers to
get beyond the density limits of six-transistor embedded SRAM. With
improved density, this technology offers significant saving in power
consumption by using under a quarter of the active power of traditional
high performance SRAM memories. 1T SRAM technology has been volume
production proven and MoSys has produced millions of units of discrete
memory devices using this 1T-SRAM technology.
MoSys, Inc. is a semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The companyıs unique memory architecture
has been proven in the volume production of discrete memory devices.
Licensees that are adopting 1T-SRAM technology include tier one
electronics, semiconductor and foundry companies. The company is
headquartered at 1020 Stewart Drive, Sunnyvale, California, 94085.
More information on MoSys is available at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other
trademarks or registered trademarks are the property of their respective