Embedded 1T-SRAM uses TSMC 0.18-micron standard logic process

SUNNYVALE, CA (October 18, 1999)— MoSys Inc. announced today the licensing of MoSys' patented 1T-SRAM by Pixelworks, Inc. for use in future generation ImageProcessor chips - display controller integrated circuits (ICs) for advanced display products. This license continues the growing market acceptance of the ultra-high density 1T-SRAM by OEMs developing leading edge systems and consumer products.

"Pixelworks' success is based on our ability to design and deliver highly integrated chips that deliver exceptional performance," says Mike West, Pixelworks' vice president of technology. "We selected MoSys' 1T-SRAM, because it delivers the exceptional SRAM performance we require and at densities significantly ahead of any other embedded memory."

Pixelworks selected 1T-SRAM in TSMCıs 0.18-micron standard logic process to achieve cost-effective system level integration. Unique among memory technologies, MoSys' 1T-SRAM has been delivering exceptional performance in the ultra-high density that Systems-on-Chip (SoCs) require. Designers gain the technology benefits, while enjoying the cost advantages without compromise.

Pixelworks' ImageProcessor SoCs are single-chip display controllers that are integrated into advanced display products including monitors, projectors and televisions using LCD, gas plasma and Digital Light Processing (DLP) technologies.

"Pixelworks' advanced technology ImageProcessors are helping to drive the rapid adoption of flat panel monitors and other advanced display products," says Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. "We are pleased that 1T-SRAM technology is enabling this continuous innovation in such critical high growth, high volume markets. MoSys is committed to delivering the embedded memory technologies that SoC designers, such as Pixelworks, need in order to deliver truly revolutionary products."

Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells. Embedded 1T-SRAM allows designers to get beyond the density limits of six-transistor SRAMs; it also reduces much of the circuit complexity and extra cost associated with using embedded DRAM. 1T-SRAM memories can be fabricated in either pure logic or embedded memory processes using as little as one ninth of the area of traditional six-transistor SRAM cores. In addition to the exceptional performance and density, this technology offers dramatic power consumption savings by using under a quarter of the power of traditional SRAM memories. 1T-SRAM technology is volume production proven in millions of MoSys' discrete memory devices.

MoSys, Inc. is the leading semiconductor technology company specializing in innovative, high performance, random access memories including products based on its patented 1T-SRAM technology. Founded in 1991, the company develops and markets memory integrated circuits as well as licenses memory technology and cores to semiconductor and systems companies. The companyıs unique memory architecture has been proven in the volume production of over 30 million memory devices. Licensees that are adopting 1T-SRAM technology include tier one electronics and semiconductor companies such as Nintendo, Analog Devices, and NEC. The company is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086. More information on MoSys is available at http://www.mosys.com.