Intersil Corporation (ticker: ISIL, exchange: NASDAQ Global Market (.O))
News Release -
Intersil Delivers 150V UltraFET MOSFET For DC/DC Converter and Motor Control Applications (HUF75842)
— Delivers breakdown voltages greater than 100V with improved gate charge and switching speed
The HUF75842 family of devices offers DC/DC converter engineers, who require MOSFETs with breakdown voltages higher than 100V, alternatives to the standard 200V MOSFETs currently available on the market. From a maximum frequency of operation viewpoint, speed is more important than switching losses, therefore the HUF75842 devices were engineered specifically for designers who are looking for low rDS(ON) MOSFETs and who are willing to sacrifice on-resistance for improved gate charge and switching speed.
Intersil's 150V devices have been designed specifically for use in UPS, DC/DC converter and motor control applications. A low rDS(ON) rating of 42 mOhm makes these devices ideally suited for use in UPS. Optimal trade off between rDS(ON), gate charge and switching speed allows engineers to employ the HUF75842 as a means of improving overall efficiency in DC/DC converter applications. The device's improved thermal rating suits motor control and AC/DC inverter applications.
Superior electrical parameters make the HUF75842 ideal for use in applications, especially DC/DC converter applications, where heat dissipation and improved efficiency is critical. Intersil's HUF75842 UltraFET MOSFET features 42 mOhm rDS(ON), a maximum gate charge of 92 nC and typical fall time (tf) and turn off delay time (tdoff) of 34 nanoseconds (nS) and 47 nS respectively.
Intersil plans on introducing other 150V products by the end of the calendar year. The HUF75829D3S a 150 mOhm/D-Pak device, the HUF75831SK8 a 100 mOhm/SO-8 device and the HUF75852G3 a 16 mOhm/TO-247 device will all be available in production quantities by the end of 1999. Other devices engineered to provide the lowest possible rDS(ON) (approximately 28 mOhm) in TO-220 and D2-Pak packages will be available in the first quarter of calendar year 2000.
Intersil's advanced UltraFET process technology achieves the lowest possible on-resistance per silicon area, lower gate charge, improved dynamic switching characteristics, and other capabilities resulting in unparalleled device performance. UltraFET devices withstand high peak currents and energy in the avalanche mode, essential when switching inductive loads. The process also enables devices between 60V and 100V to achieve the highest levels of performance on the market today. Intersil will continue to release UltraFET products that are designed to increase our customers' system efficiency requirements. In the coming months, Intersil will release its 150V and 200V UltraFETs and its next generation of products with breakdown voltages of 30V or less.
Intersil remains committed to investments in new technology, product development, and software with an emphasis on providing solutions for our customers. All Intersil UltraFET devices are fully compliant with the latest AEC Q101 specification, including the recently added preconditioning with forced moisture penetration. Intersil's Power Discrete facilities are also QS9000 certified.
The HUF75842 family is immediately available in the TO-220 (HUF75842P3) and D2-Pak (HUF75842S3S) packages for production quantity orders.